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Advances in Condensed Matter Physics
Volume 2016, Article ID 8017139, 6 pages
Research Article

Large-Signal DG-MOSFET Modelling for RFID Rectification

1Institute for Applied Microelectronics, Universidad de Las Palmas de Gran Canaria, Edificio de Electrónica y Telecomunicación, Campus Universitario de Tafira, 35017 Las Palmas, Spain
2Departament d’Enginyeria Electrònica, Elèctrica i Automàtica, Universitat Rovira i Virgili, Escola Tècnica Superior d’Enginyeria, Av. Dels Països Catalans 26, 43007 Tarragona, Spain

Received 6 September 2016; Accepted 4 October 2016

Academic Editor: Luis L. Bonilla

Copyright © 2016 R. Rodríguez et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [1 citation]

The following is the list of published articles that have cited the current article.

  • Bulaeva, and Pankratov, “On optimization of manufacturing of a rectifier based on heterostructures to increase density of their elements. Influence of miss-match induced stress on technological process,” Journal of Computational and Theoretical Nanoscience, vol. 14, no. 7, pp. 3510–3525, 2017. View at Publisher · View at Google Scholar