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Advances in Condensed Matter Physics
Volume 2016, Article ID 8017139, 6 pages
http://dx.doi.org/10.1155/2016/8017139
Research Article

Large-Signal DG-MOSFET Modelling for RFID Rectification

1Institute for Applied Microelectronics, Universidad de Las Palmas de Gran Canaria, Edificio de Electrónica y Telecomunicación, Campus Universitario de Tafira, 35017 Las Palmas, Spain
2Departament d’Enginyeria Electrònica, Elèctrica i Automàtica, Universitat Rovira i Virgili, Escola Tècnica Superior d’Enginyeria, Av. Dels Països Catalans 26, 43007 Tarragona, Spain

Received 6 September 2016; Accepted 4 October 2016

Academic Editor: Luis L. Bonilla

Copyright © 2016 R. Rodríguez et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

R. Rodríguez, B. González, J. García, A. Lázaro, B. Iñiguez, and A. Hernández, “Large-Signal DG-MOSFET Modelling for RFID Rectification,” Advances in Condensed Matter Physics, vol. 2016, Article ID 8017139, 6 pages, 2016. https://doi.org/10.1155/2016/8017139.