Research Article

Large-Signal DG-MOSFET Modelling for RFID Rectification

Figure 7

Transient response for the rectified output voltage with conventional DG-MOSFETs (squares), Texas Instruments 0.18 μm-NMOS (solid line, with HSPICE), and DG-MOSFETs with TiN (dotted line), for an input power of 5 dBm at 5 GHz.