Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability

Figure 13

Raman spectra recorded for the Ni₂Si/n-SiC contacts with FL-Si after different thermal treatment: (a) as-deposited; (b) 600°C/15 min; (c) 950°C/3 min; (d) 1050°C/3 min.

(a)

(b)

(c)

(d)