Ni-Based Ohmic Contacts to<i> n</i>-Type 4H-SiC: The Formation Mechanism and Thermal Stability

<div>Electrical properties of Ni/Si multilayer contacts with different interfacial layer (Si: FL-Si or Ni: FL-Ni) and thickness ratio (<svg height="12.584pt" id="M35" style="vertical-align:-3.29567pt" version="1.1" viewbox="-0.0498162 -9.28833 31.3167 12.584" width="31.3167pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M324 430H196L233 583L223 592L145 529L120 430H54L29 396L31 388H111L56 126C33 15 54 -12 77 -12C137 -12 214 57 250 95L233 119C208 92 155 59 138 59C126 59 120 70 131 125L186 390L298 394L324 430Z" id="g113-117"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="341" vert-adv-y="341"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,4.368,3.132)"><path d="M731 650H485V618C556 614 580 601 585 558C588 530 592 485 592 390V153H589L173 650H22V618C69 614 92 606 112 582C131 558 132 555 132 483V266C132 175 129 128 125 96C120 49 95 36 36 33V0H281V33C212 36 188 50 183 98C180 129 177 175 177 266V510H179L603 -9H638V390C638 483 640 530 644 561C649 602 674 615 731 618V650Z" id="g58-76"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="754" vert-adv-y="754"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,11.038,3.132)"><path d="M138 535C169 535 191 560 191 589C191 620 168 644 139 644S85 620 85 589C85 560 110 535 138 535ZM257 0V30C192 35 185 43 185 109V453C142 435 94 422 40 414V386C101 378 104 372 104 311V109C104 41 97 35 33 30V0H257Z" id="g58-103"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="275" vert-adv-y="275"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,14.073,0)"><path d="M368 703H309L44 -163H104L368 703Z" id="g113-48"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="412" vert-adv-y="412"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,19.434,0)"><path d="M324 430H196L233 583L223 592L145 529L120 430H54L29 396L31 388H111L56 126C33 15 54 -12 77 -12C137 -12 214 57 250 95L233 119C208 92 155 59 138 59C126 59 120 70 131 125L186 390L298 394L324 430Z" id="g113-117"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="341" vert-adv-y="341"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,23.802,3.132)"><path d="M416 501L399 642C356 655 314 665 271 665C140 665 63 582 63 486C63 372 163 325 229 290C304 250 359 217 359 142C359 70 316 25 240 25C138 25 94 125 78 186L44 178C52 123 64 45 72 21C81 16 96 8 121 0S179 -15 220 -15C353 -15 445 68 445 176C445 289 350 335 270 375C191 414 143 449 143 520C143 572 177 627 253 627C340 627 366 556 382 495L416 501Z" id="g58-81"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="484" vert-adv-y="484"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,28.143,3.132)"><path d="M138 535C169 535 191 560 191 589C191 620 168 644 139 644S85 620 85 589C85 560 110 535 138 535ZM257 0V30C192 35 185 43 185 109V453C142 435 94 422 40 414V386C101 378 104 372 104 311V109C104 41 97 35 33 30V0H257Z" id="g58-103"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="275" vert-adv-y="275"></glyph.data></g></svg>) to<i> n</i>-type (~2 × 10<sup>17</sup> cm<sup>−3</sup>) 4H-SiC bulk wafers versus annealing temperature.</div>

Advances in Condensed Matter Physics

fig2

Figure 2

Figure 2: Ni-Based Ohmic Contacts to<i> n</i>-Type 4H-SiC: The Formation Mechanism and Thermal Stability 

Advances in Condensed Matter Physics

Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability

Figure 2