Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability

Figure 5

(a) XRD patterns of Ni₂Si/n-SiC contacts before and after annealing at 600, 950, 1050, and 1100°C. (b) Ni₂Si texture () and FWHM of (013)Ni₂Si peak in XRD patterns versus annealing temperature (horizontal dash lines show the theoretical value for in the absence of texture) [66].

(a)

(b)