Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability

Figure 8

Cross-sectional (a, c) and plan-view (b, d) TEM micrographs obtained from Ni/Si/Ni/Si/4H-SiC contact annealed at 600°C and subsequently at 1050°C (a, b) or 1100°C (c, d). Exemplary voids are indicated with number 1 and discontinuities of the layer are indicated with number 2.

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(b)

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(d)