Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability

Figure 9

Cross-sectional high-resolution TEM images of interfacial region between the 4H-SiC substrate and the Ni-silicide after annealing at 600°C (a) and subsequently at 1050°C (b) [71].

(a)

(b)