Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability

Table 1

Properties of Ni and phases used in metallization scheme for SiC [46–48].

Phase	Resistivity (µΩ cm)	Melting point (°C)	Enthalpy of formation (kJ/mol)	Work function (eV)
Ni	8−10	1435−1446	—	4.86 ± 0.2
Ni2Si	20−30	1255−1318	132−143	4.46
NiSi	10−20	992	85−90	4.35
NiSi2	35−50	981−993	87−94	—