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Advances in Condensed Matter Physics
/
2016
/
Article
/
Tab 3
/
Research Article
Ni-Based Ohmic Contacts to
n
-Type 4H-SiC: The Formation Mechanism and Thermal Stability
Table 3
Properties of
and
bands recorded for reference Ni/
-SiC contact.
Sample
D
band
G
band
Maximum [cm
−1
]
FWHM [cm
−1
]
Maximum [cm
−1
]
FWHM [cm
−1
]
Ni, broad
1349
110
1569
75
1.02
Ni, narrow
1362
47
1582
31
0.85