Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability

Table 4

Properties of D and G bands observed for the Ni₂Si/-SiC contacts annealed at 600, 950, and 1050°C.

Sample	D band		G band
	Maximum [cm^−1]	FWHM [cm^−1]	Maximum [cm^−1]	FWHM [cm^−1]
600°C	1361	61	1597	91	0.78
950°C	1366	47	1584	51	0.46
1050°C	1360	48	1586	39	0.50