Theoretical Investigation on Structural and Electronic Properties of InN Growth on Ce-Stabilized Zirconia (111) Substrates

<table class="table-group" id="tab1"><tr><td><table class="table"><tr><td class="thead-hr" colspan="2"><hr/></td></tr><tr class="thead"><td class="align_left"> </td><td class="align_center">Surface energy</td></tr><tr><td class="thead-hr" colspan="2"><hr/></td></tr><tr><td class="align_left">Ce-segregation-free</td><td class="align_center">0.056</td></tr><tr><td class="align_left">Ce-segregated</td><td class="align_center">0.044</td></tr><tr class="table-tr"><td colspan="2"><hr class="tbody-hr"/></td></tr></table></td></tr></table>

Surface energy (in eV/A<sup>2</sup>) of Ce-segregation-free and Ce-segregated CeSZ (111) surfaces.

Advances in Condensed Matter Physics

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Table 1

Table 1: Theoretical Investigation on Structural and Electronic Properties of InN Growth on Ce-Stabilized Zirconia (111) Substrates 