Theoretical Investigation on Structural and Electronic Properties of InN Growth on Ce-Stabilized Zirconia (111) Substrates

<table class="table-group" id="tab4"><tr><td><table class="table"><tr><td class="thead-hr" colspan="3"><hr/></td></tr><tr class="thead"><td class="align_left" rowspan="2">Surface</td><td class="align_left" colspan="2">
                Adsorption energy of In atom</td></tr><tr class="thead"><td class="align_center">In-polarity</td><td class="align_center">N-polarity</td></tr><tr><td class="thead-hr" colspan="3"><hr/></td></tr><tr><td class="align_left">Ce-segregated</td><td class="align_center">3.32</td><td class="align_center">3.26</td></tr><tr><td class="align_left">Ce-segregation-free </td><td class="align_center">3.95</td><td class="align_center">3.66</td></tr><tr class="table-tr"><td colspan="3"><hr class="tbody-hr"/></td></tr></table></td></tr></table>

Adsorption energies (in eV) of an In atom on the nitrogen layer covering CeSZ (111) surfaces.

Advances in Condensed Matter Physics

tab4

Table 4

Table 4: Theoretical Investigation on Structural and Electronic Properties of InN Growth on Ce-Stabilized Zirconia (111) Substrates 