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Advances in Condensed Matter Physics
Volume 2017, Article ID 5652763, 7 pages
https://doi.org/10.1155/2017/5652763
Research Article

External Electric Field Effect on Shallow Donor Impurity States in Zinc-Blende InxGa1−xN/GaN Symmetric Coupled Quantum Dots

1College of Science, North China University of Science and Technology, Tangshan 063000, China
2Publishing Management Center, North China University of Science and Technology, Tangshan 063000, China

Correspondence should be addressed to Guang-Xin Wang; moc.621@gnawnixgnaug

Received 18 July 2017; Accepted 12 September 2017; Published 3 December 2017

Academic Editor: Gongxun Bai

Copyright © 2017 Guang-Xin Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Guang-Xin Wang, Li-Li Zhang, and Huan Wei, “External Electric Field Effect on Shallow Donor Impurity States in Zinc-Blende InxGa1−xN/GaN Symmetric Coupled Quantum Dots,” Advances in Condensed Matter Physics, vol. 2017, Article ID 5652763, 7 pages, 2017. https://doi.org/10.1155/2017/5652763.