External Electric Field Effect on Shallow Donor Impurity States in Zinc-Blende In_xGa_1−xN/GaN Symmetric Coupled Quantum Dots

Figure 2

The ground-state donor binding energy in a ZB /GaN symmetric coupled QDs as a function of the dot radius R with  nm,  nm,  nm, . In these calculations were considered three values of the applied electric field—zero (curve 1),  kV/cm (curve 2), and  kV/cm (curve 3).