External Electric Field Effect on Shallow Donor Impurity States in Zinc-Blende In_xGa_1−xN/GaN Symmetric Coupled Quantum Dots

Figure 3

The ground-state donor binding energy in a ZB /GaN symmetric coupled QDs as a function of the QD thickness for  nm,  nm,  kV/cm, . Curves 1, 2, and 3 are for the impurity positions , , 0, respectively.