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Advances in Condensed Matter Physics
Volume 2017, Article ID 5652763, 7 pages
https://doi.org/10.1155/2017/5652763
Research Article

External Electric Field Effect on Shallow Donor Impurity States in Zinc-Blende InxGa1−xN/GaN Symmetric Coupled Quantum Dots

1College of Science, North China University of Science and Technology, Tangshan 063000, China
2Publishing Management Center, North China University of Science and Technology, Tangshan 063000, China

Correspondence should be addressed to Guang-Xin Wang; moc.621@gnawnixgnaug

Received 18 July 2017; Accepted 12 September 2017; Published 3 December 2017

Academic Editor: Gongxun Bai

Copyright © 2017 Guang-Xin Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. A. Lotsari, G. P. Dimitrakopulos, T. Kehagias, A. Das, E. Monroy, and P. Komninou, “Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE,” Microelectronic Engineering, vol. 90, pp. 108–111, 2012. View at Publisher · View at Google Scholar · View at Scopus
  2. S. Nakamura and S. F. Chichibu, Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes, Taylor & Francis, London, UK, 2000.
  3. W. S. Tan, V. Bousquet, M. Kauer, K. Takahashi, and J. Heffernan, “Ingan-based blue-violet laser diodes using AlN as the electrical insulator,” Japanese Journal of Applied Physics, vol. 48, no. 7, Article ID 072102, 2009. View at Publisher · View at Google Scholar · View at Scopus
  4. M. Gladysiewicz, R. Kudrawiec, J. Misiewicz et al., “The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures,” Applied Physics Letters, vol. 98, no. 1, Article ID 231902, 2011. View at Publisher · View at Google Scholar · View at Scopus
  5. J. L. Liu, S. S. Li, Z. C. Niu, F. H. Yang, and S. L. Feng, “Optical spectra and exciton state in vertically stacked self-assembled quantum discs,” Chinese Physics Letters, vol. 20, no. 7, pp. 1120–1123, 2003. View at Publisher · View at Google Scholar · View at Scopus
  6. Q. R. Dong, S. S. Li, Z. C. Niu, S. L. Feng, and H. Z. Zheng, “Electronic structure of self-assembled InAs quantum disks in an axial magnetic field and two-electron quantum-disk qubit,” Journal of Applied Physics, vol. 96, no. 6, pp. 3277–3281, 2004. View at Publisher · View at Google Scholar · View at Scopus
  7. J. J. Liu, M. Shen, and S. W. Wang, “The influence of compressive stress on shallow-donor impurity states in symmetric GaAs-Ga1-xAlxAs double quantum dots,” Journal of Applied Physics, vol. 101, no. 7, Article ID 073703, 2007. View at Publisher · View at Google Scholar · View at Scopus
  8. L. Z. Liu and J. J. Liu, “Hydrogenic-donor impurity states in coupled quantum disks in the presence of a magnetic field,” Journal of Applied Physics, vol. 102, no. 3, Article ID 033709, 2007. View at Publisher · View at Google Scholar · View at Scopus
  9. X. F. Wang, “Hydrogenic impurity in double quantum dots,” Physics Letters A, vol. 364, no. 1, pp. 66–69, 2007. View at Publisher · View at Google Scholar · View at Scopus
  10. G. X. Wang, X. Z. Duan, and W. Chen, “Barrier thickness and hydrostatic pressure effects on hydrogenic impurity states in wurtzite GaN/AlxGa1−xN strained quantum dots,” Journal of Nanomaterials, vol. 2015, Article ID 937310, 9 pages, 2015. View at Publisher · View at Google Scholar
  11. M. Zhang and J. J. Shi, “Influence of pressure on exciton states and interband optical transitions in wurtzite InGaN/GaN coupled quantum dot nanowire heterostructures with polarization and dielectric mismatch,” Journal of Applied Physics, vol. 111, Article ID 113516, 11 pages, 2012. View at Publisher · View at Google Scholar · View at Scopus
  12. C. X. Xia, Z. P. Zeng, Q. Chang, and S. Y. Wei, “Donor impurity states in zinc-blende InGaN/GaN asymmetric coupled quantum dots: Hydrostatic pressure effect,” Physica E: Low-dimensional Systems and Nanostructures, vol. 42, no. 8, pp. 2041–2046, 2010. View at Publisher · View at Google Scholar · View at Scopus
  13. H. El Ghazi, A. Jorio, and I. Zorkani, “Theoretical investigation of stark effect on shallow donor binding energy in InGaN spherical QD-QW,” Physica B: Condensed Matter, vol. 422, pp. 47–50, 2013. View at Publisher · View at Google Scholar · View at Scopus
  14. B. E. Kane, “A silicon-based nuclear spin quantum computer,” Nature, vol. 393, no. 6681, pp. 133–137, 1998. View at Publisher · View at Google Scholar · View at Scopus
  15. C. X. Xia, Y. M. Liu, and S. Y. Wei, “Hydrogenic impurity states in zinc-blende GaN/AlN coupled quantum dots,” Physics Letters A, vol. 372, no. 42, pp. 6420–6423, 2008. View at Publisher · View at Google Scholar · View at Scopus
  16. F. C. Jiang, C. X. Xia, and S. Y. Wei, “Hydrogenic impurity states in zinc-blende InGaN quantum dot,” Physica B: Condensed Matter, vol. 403, no. 1, pp. 165–169, 2008. View at Publisher · View at Google Scholar · View at Scopus
  17. L. M. Jiang, H. L. Wang, H. T. Wu, Q. Gong, and S. L. Feng, “External electric field effect on the hydrogenic donor impurity in zinc-blende GaN/AlGaN cylindrical quantum dot,” Journal of Applied Physics, vol. 105, no. 5, Article ID 053710, 2009. View at Publisher · View at Google Scholar · View at Scopus
  18. L. M. Jiang, H. L. Wang, H. T. Wu, Q. Gong, and S. L. Feng, “External electric field effect on hydrogenic donor impurity in zinc-blende InGaN quantum dot,” Chinese Physics Letters, vol. 25, no. 8, pp. 3017–3020, 2008. View at Publisher · View at Google Scholar · View at Scopus
  19. G. X. Wang, R. Zhou, and X. Z. Duan, “Combined effects of an intense laser field, electric field and hydrostatic pressure on donor impurity states in zinc-blende InGaN/GaN quantum dots,” Journal of the Korean Physical Society, vol. 69, no. 2, pp. 189–196, 2016. View at Publisher · View at Google Scholar · View at Scopus
  20. C. X. Xia, Z. P. Zeng, S. Y. Wei, and J. B. Wei, “Shallow-donor impurity in vertical-stacked InGaN/GaN multiple-quantum wells: electric field effect,” Physica E: Low-dimensional Systems and Nanostructures, vol. 43, no. 1, pp. 458–461, 2010. View at Publisher · View at Google Scholar · View at Scopus
  21. T. Vurgaftman and J. R. Meyer, “Band parameters for III–V compound semiconductors and their alloys,” Journal of Applied Physics, vol. 94, no. 6, pp. 3676–3696, 2003. View at Google Scholar