Advances in Condensed Matter Physics / 2017 / Article / Tab 1

Research Article

Resonance Raman Scattering in TlGaSe2 Crystals

Table 1

Emission lines of resonance Raman scattering in TlGaSe2 crystals measured at 10 K and excited by 514.5 nm Ar+ laser line in geometry and possible phonons combinations (symmetry, modes, and frequencies) responsible for resonance scattering.

Line, Wavenumber
shift, cm−1
Assignment

1120(LO), 121;
2134(LO), 67 + (LO), 67;
3140(LO), 140;
4151(LO), 67 + (LO), 84;
5163(LO), 73 + (LO), 91;
6187(LO), 106 + (LO), 84; (LO), 114 + (LO), 73;
7238(LO), 114 + (LO), 121;
8313 (LO), 240 + (LO), 73;
9436(LO), 106 + (LO), 224;
10480(LO), 240 + (LO), 240;
12590(LO), 260 + (LO), 91 + (LO), 240;
13634(LO), 260 + (LO), 260 + (LO), 114;
14732(LO), 240 + (LO), 224 + (LO), 268;
15960(LO), 240 + (LO), 240 + (LO), 240 + (LO), 240;
16999(LO), 240 + (LO), 240 + (LO), 260 + (LO), 260;
171075(L), 73 + (LO), 240 + (LO), 240 + (LO), 260 + (LO), 260;

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