Advances in Condensed Matter Physics / 2017 / Article / Tab 2

Research Article

Resonance Raman Scattering in TlGaSe2 Crystals

Table 2

Emission lines of resonance Raman scattering in TlGaSe2 crystals measured at 10 K and excited by 496.5 nm Ar+ laser line in geometry and possible phonons combinations (symmetry, modes, and frequencies) responsible for resonance scattering.

Line, Wavenumber
shift, cm−1
Assignment

166(LO), 67;
275(LO), 73;
385(LO), 84;
496(LO), 91;
5117(LO), 121; (TO), 116; (LO), 114;
6142(LO), 140; (LO), 67 + (LO), 73;
7194(LO), 114 + (LO), 84; (LO), 121 + (LO), 73;
8217(LO), 106 + (LO), 106;
9236(LO), 121 + (LO), 114; (LO), 162 + (LO), 73;
10279(LO), 114 + (LO), 162;
11322(LO), 240 + (LO), 84; (LO), 162 + (LO), 162;
12355(LO), 268 + (L), 84;
13401(LO), 240 + (LO), 260;
14446(LO), 224 + (LO), 224;
15482(LO), 260 + (LO), 224;
16493(LO), 268 + (LO), 224;
17525(LO), 260 + (LO), 268;

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