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Advances in Condensed Matter Physics
Volume 2017 (2017), Article ID 7820676, 8 pages
https://doi.org/10.1155/2017/7820676
Research Article

Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al

Physical-Technical Institute, Scientific Association “Physics-Sun”, Uzbek Academy of Sciences, Bodomzor Street 2B, 100084 Tashkent, Uzbekistan

Correspondence should be addressed to Kh. N. Juraev; moc.liamg@ilatammihk

Received 12 January 2017; Revised 30 March 2017; Accepted 3 May 2017; Published 30 May 2017

Academic Editor: Jörg Fink

Copyright © 2017 I. G. Atabaev et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

I. G. Atabaev, Kh. N. Juraev, and V. A. Pak, “Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al,” Advances in Condensed Matter Physics, vol. 2017, Article ID 7820676, 8 pages, 2017. doi:10.1155/2017/7820676