Research Article
Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al
Figure 8
Results of fitting of expressions (2, 3) to experimental data: (a) reverse applied voltage 6 V; (b) direct applied voltage 6 V; (c) direct applied voltage 10 V.
(a) |
(b) |
(c) |