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Advances in Condensed Matter Physics
Volume 2018, Article ID 1040689, 5 pages
https://doi.org/10.1155/2018/1040689
Research Article

MBE Growth and Optical Properties of GaN, InN, and A3 B5 Nanowires on SiC/Si(111) Hybrid Substrate

1St. Petersburg Academic University-Nanotechnology Research and Education Centre RAS, Khlopina 8/3, St. Petersburg, Russia
2Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, St. Petersburg, Russia
3Institute for Analytical Instrumentation RAS, Rizhsky 26, St. Petersburg, Russia
4ITMO University, Kronverkskiy Pr. 49, St. Petersburg, Russia
5Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg, Russia
6Institute of Problems of Mechanical Engineering Russian Academy of Science, Bolshoj 6, St. Petersburg, Russia

Correspondence should be addressed to G. E. Cirlin; ur.effoi.maeb@nilric

Received 5 January 2018; Revised 27 April 2018; Accepted 20 May 2018; Published 11 June 2018

Academic Editor: Joseph S. Poon

Copyright © 2018 R. R. Reznik et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

R. R. Reznik, K. P. Kotlyar, I. V. Ilkiv, et al., “MBE Growth and Optical Properties of GaN, InN, and A3 B5 Nanowires on SiC/Si(111) Hybrid Substrate,” Advances in Condensed Matter Physics, vol. 2018, Article ID 1040689, 5 pages, 2018. https://doi.org/10.1155/2018/1040689.