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Advances in Condensed Matter Physics
Volume 2018, Article ID 1592689, 4 pages
Research Article

Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure

1Key Laboratory of Intelligent Information Processing in Universities of Shandong, School of Information and Electronic Engineering, Shandong Technology and Business University, Yantai 264005, China
2Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
3School of Electronic and Electrical Engineering, Chuzhou University, Chuzhou 239000, China

Correspondence should be addressed to Yanli Liu; moc.361@7270uililnay and Dunjun Chen; nc.ude.ujn@nehcjd

Received 5 January 2018; Accepted 30 January 2018; Published 1 April 2018

Academic Editor: Shenghuang Lin

Copyright © 2018 Yanli Liu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Temperature dependence of the energy band diagram of AlGaN/GaN heterostructure was investigated by theoretical calculation and experiment. Through solving Schrodinger and Poisson equations self-consistently by using the Silvaco Atlas software, the energy band diagram with varying temperature was calculated. The results indicate that the conduction band offset of AlGaN/GaN heterostructure decreases with increasing temperature in the range of 7 K to 200 K, which means that the depth of quantum well at AlGaN/GaN interface becomes shallower and the confinement of that on two-dimensional electron gas reduces. The theoretical calculation results are verified by the investigation of temperature dependent photoluminescence of AlGaN/GaN heterostructure. This work provides important theoretical and experimental basis for the performance degradation of AlGaN/GaN HEMT with increasing temperature.