Research Article
Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory
Figure 1
C-V and G-V curves of the Au/Zr (3 nm)/YSZ (40 nm)/-Si MOS stack measured at various temperatures. Ramp voltage sweep rate V/s, measurement frequency kHz.