Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stacks for Use in Charge Trapping Flash Memories

<div><svg height="8.8423pt" id="M91" style="vertical-align:-0.2064009pt" version="1.1" viewbox="-0.0498162 -8.6359 8.8162 8.8423" width="8.8162pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M645 631C614 643 545 666 457 666C215 666 23 519 23 283C23 90 158 -16 337 -16C412 -16 489 2 522 10C543 39 590 127 606 167L580 181C519 89 459 18 348 18C201 18 122 136 122 287C122 464 244 632 435 632C544 632 602 595 608 472L639 475C643 526 645 581 645 631Z" id="g113-68"></path></g></svg>-<svg height="8.8423pt" id="M92" style="vertical-align:-0.2064009pt" version="1.1" viewbox="-0.0498162 -8.6359 9.35121 8.8423" width="9.35121pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z" id="g113-87"></path></g></svg> hysteresis between maximum write and erase voltages.</div>

Advances in Condensed Matter Physics

fig7

Figure 7

Figure 7: Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stacks for Use in Charge Trapping Flash Memories 

Figure 7 | Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories 