Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO₂/Al₂O₃ Stacks for Use in Charge Trapping Flash Memories

Table 2

Flatband voltages of the samples for various runs.

Start point	Fresh	−5 V	+3 V	+5 V	+10 V
(V)	−0.01	0.37	1.54	2.33	2.49
(cm^−2)	−1.9 × 10^12	−2.9 × 10^12	−6.2 × 10^12	−8.4 × 10^12	−8.9 × 10^12