Unusual Operation of the Junction Transistor Based on Dynamical Behavior of Impurities

<div>Transistor action dependent on ionized impurities. (a) Displacement of the charge carries at inductor polarity (<svg height="7.35473pt" id="M216" style="vertical-align:-0.3499303pt" version="1.1" viewbox="-0.0498162 -7.0048 7.75925 7.35473" width="7.75925pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M535 290V340H323V533H265V340H52V290H265V84H323V290H535ZM535 -22V28H52V-22H535Z" id="g117-37"></path></g></svg>). (b) Displacement of the charge carries at inductor polarity (<svg height="7.35473pt" id="M217" style="vertical-align:-0.3499303pt" version="1.1" viewbox="-0.0498162 -7.0048 7.75925 7.35473" width="7.75925pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M535 170V220H323V426H265V220H52V170H265V-23H323V170H535ZM535 482V532H52V482H535Z" id="g117-38"></path></g></svg>). (c) Action in the energy band diagram.</div>

Advances in Condensed Matter Physics

fig9

Figure 9

Figure 9: Unusual Operation of the Junction Transistor Based on Dynamical Behavior of Impurities 