Unusual Operation of the Junction Transistor Based on Dynamical Behavior of Impurities

Table 1

Physical parameters for the NPN silicon MPSH10 transistor.

Parameter
	9.35 Ω	17.25 Ω	23.02 Ω
	0.039 Ω^−1	0.079 Ω^−1	0.119 Ω^−1
	0.020 Ω^−1	0.041 Ω^−1	0.062 Ω^−1
	1.34 x10^−8 cm	1.39 x10^−8 cm	1.43 x10^−8 cm
	5.38 x10^−5 cm	5.57 x10^−5 cm	5.75 x10^−5 cm
	7.82 x10^−7 cm	6.97 x10^−7 cm	5.99 x10^−7 cm
	3.12 x10^−5 cm	2.78 x10^−5 cm	2.39 x10^−5 cm
	7.70 nF	7.44 nF	7.20 nF
	1.32 nF	1.48 nF	1.73 nF
	33.14 pF	37.18 pF	43.21 pF
	12.04 ns	18.62 ns	40.68 ns
	0.934 cm^2s^−1	0.604 cm^2s^−1	0.276 cm^2s^−1
	35.92 cm^2V^−1s^−1	23.23 cm^2V^−1s^−1	10.63 cm^2V^−1s^−1