Unusual Operation of the Junction Transistor Based on Dynamical Behavior of Impurities

Table 2

Operation parameters for the proposed circuit of Figure 1(b).

Parameter
2 turns
	0.27 V	0.72 V	0.98 V
	30.75 MHz	28.97 MHz	28.25 MHz
	18 ns	14 ns	14 ns
	7.62 cm^2s^−1	9.79 cm^2s^−1	9.79 cm^2s^−1
	293.07 cm^2V^−1s^−1	376.53 cm^2V^−1s^−1	376.53 cm^2V^−1s^−1
5 turns
	0.46 V	0.89 V	0.94 V
	27.17 MHz	24.04 MHz	22.22 MHz
	12 ns	10 ns	10 ns
		8 ns	12 ns
	11.43 cm^2s^−1	13.71 cm^2s^−1	13.71 cm^2s^−1
		17.14 cm^2s^−1	11.43 cm^2s^−1
	439.72 cm^2V^−1s^−1	527.67 cm^2V^−1s^−1	527.67 cm^2V^−1s^−1
		659.59 cm^2V^−1s^−1	439.72 cm^2V^−1s^−1
9 turns
	0.98 V	1.11 V	1.24 V
	22.83 MHz	14.27 MHz	12.55 MHz
	20 ns	10 ns	15 ns
		20 ns	25 ns
	6.85 cm^2s^−1	13.71 cm^2s^−1	9.14 cm^2s^−1
		6.85 cm^2s^−1	5.48 cm^2s^−1
	263.83 cm^2V^−1s^−1	527.67 cm^2V^−1s^−1	351.78 cm^2V^−1s^−1
		263.83 cm^2V^−1s^−1	211.06 cm^2V^−1s^−1