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Advances in Condensed Matter Physics
Volume 2018, Article ID 5483756, 6 pages
https://doi.org/10.1155/2018/5483756
Research Article

The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
2The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou 510610, China
3Chengdu Technological University, Chengdu 611730, China

Correspondence should be addressed to Xue Fan; moc.liamxof@naf_x

Received 2 November 2017; Accepted 16 April 2018; Published 20 May 2018

Academic Editor: Faheem. K. Butt

Copyright © 2018 Jingyu Shen et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Jingyu Shen, Can Tan, Rui Jiang, et al., “The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection,” Advances in Condensed Matter Physics, vol. 2018, Article ID 5483756, 6 pages, 2018. https://doi.org/10.1155/2018/5483756.