Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate

<div>(a) Longitudinal temperature changes of the sample at x = 0 with different laser powers. The vertical lines delimit the area of Si<sub>0.2</sub>Ge<sub>0.8</sub> layer. (b) Peak temperatures of Si<sub>0.2</sub>Ge<sub>0.8</sub> upper surface and lower surface as a function of laser power.</div>

Advances in Condensed Matter Physics

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Figure 7

Figure 7: Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate 