Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate

Table 1

Thermal parameters of the materials used for the numerical model [15].

Parameters	Ge	Si
Melting point [K]	1210	1685	1210+244x+231x^2
Density ρ [kg/m^3]	5323	2329	5323-2495x-499x^2
Thermal Conductivity k [W/cmK]	0.6	1.56
Absorption coefficient α [cm^∧-1]	5×10^4	1×10^3	5×10^4 -4.9×10^4x
Specific heat capacity [J/kgK]	310	700	c(T)