Two-Dimensional Modeling of Silicon Nanowires Radial Core-Shell Solar Cells

Table 1

List of modeling parameters and defect distributions.

Parameter	Description	Values
	Crystal silicon energy band	1.12 ev
	Poly silicon energy band	1.12 ev
d	Si nanowires diameter	300/400/500 nm
P	Si nanowires array periodicity	600/800/1000 nm
h	Si nanowires length	4 μm
H	Thickness of n-type silicon substrate	2 μm
phos.c	n-type concentration of Si	1×10^13 cm^−3
	Effective density of states in silicon CB	2.8×10^19 cm^−3
t	Thickness of p-type poly silicon shell	0.05 μm
	Effective density of states in silicon VB	1.04×10^19 cm^−3
boron.c	p-type concentration of poly Si	1×10^16 cm^−3
χ	Crystal Silicon electron affinity	4.05 ev
m	ITO thickness	0.1 μm