First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction

Figure 4

Ge(110)/4H-SiC(0001) heterointerface and variations of coordinates and variation of distance are shown in (a) and (c–f), respectively. Ge(111)/4H-SiC(0001) heterointerface and variations of coordinates and variation of distance are shown in (b) and (g–j), respectively.

(a)

(b)

(c)

(d)

(e)

(f)

(g)

(h)

(i)

(j)