Research Article
First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction
Table 1
The lattice mismatch of the Ge/4H-SiC heterostructures calculated with the domain matching model.
| | Growth orientation | Ge-to-SiC
matching mode | Residual mismatch | MD density |
| | Ge(111)/4H-SiC(0001) | Ge01-1
SiC11-20 | Ge2-1-1
SiC1-100 | Ge01-1
SiC11-20 | Ge2-1-1
SiC1-100 | 5.334 × 1014 cm−2 | | 3 : 4 | 3 : 4 | 2.60% | 2.60% |
| | Ge(110)/4H-SiC(0001) | Ge001
SiC10-10 | Ge1-10
SiC-12-10 | Ge001
SiC10-10 | Ge1-10
SiC-12-10 | 1.523 × 1014 cm−2 | | 1 : 1 | 3 : 4 | −5.78% | 2.60% |
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