First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction

Table 3

Relaxation energies of Ge(111)/4H-SiC(0001) and Ge(110)/4H-SiC(0001) interfaces.

Heterojunction	(eV)	(eV)	(eV/atom)
Ge(111)/4H-SiC(0001)	−18642.163	−18644.926	−0.017
Ge(110)/4H-SiC(0001)	−11742.871	−11746.039	−0.030