Modification of the Properties of Vanadium Oxide Thin Films by Plasma-Immersion Ion Implantation

Figure 4

Conductivity temperature dependence of VO₂ film: initial sample 1 , region of the film with implanted hydrogen , and the same region, second measurement . The implanting dose is 7.5 · 10¹⁵ cm⁻², and the time of one 30–90–30°C thermal cycling is about 1 hour.