Bolometric Properties of a Spin-Torque Diode Based on a Magnetic Tunnel Junction

<div>Dependence of the frequency-independent Seebeck coefficient <svg height="11.8174pt" id="M94" style="vertical-align:-3.1815pt" version="1.1" viewbox="-0.0498162 -8.6359 19.9907 11.8174" width="19.9907pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M449 634C442 637 425 643 405 650C376 660 341 666 307 666C181 666 98 590 98 485C98 400 170 343 215 310L246 288C307 243 343 204 343 147C343 67 291 18 219 18C104 18 61 124 51 202L23 199C28 124 27 71 27 47C47 22 122 -16 204 -16C324 -16 428 60 428 174C428 256 379 309 307 360L276 382C223 419 179 455 179 516C179 576 221 632 293 632C379 632 410 564 418 487L448 490C446 536 446 592 449 634Z"></path></g><g transform="matrix(.0091,0,0,-0.0091,6.071,3.132)"><path d="M655 676H628C608 656 600 650 571 650H156C118 650 114 651 102 676H77C63 615 45 548 24 485L60 486C81 531 97 562 114 580C134 603 148 611 252 611H308L217 127C201 41 196 38 105 32L98 0H384L393 32C300 38 288 41 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Advances in Condensed Matter Physics

fig3

Figure 3

Figure 3: Bolometric Properties of a Spin-Torque Diode Based on a Magnetic Tunnel Junction 