Research Article
Bolometric Properties of a Spin-Torque Diode Based on a Magnetic Tunnel Junction
Figure 4
Frequency dependence of the amplitude of rectified signal generated across the MTJ caused by microwave heating of the spin-torque diode at different values of the input microwave power and the magnetic field , where the parameters of MTJ were taken from [14, 21] and the temperature is equal to 300 K.