Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit

<div>Conversion efficiency of capacitor load <i>C</i> = 1 pF, <i>C</i> = 100 pF, and <i>C</i> = 470 pF in the rectifier circuit.</div>

Advances in Condensed Matter Physics

Figure 12: Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit 