Research Article
Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit
Table 2
Parameter table of scattering mechanism.
| Physical quantity | Symbol | Unit |
| Ionized impurity concentration | | cm−3 | Acoustic phonon deformation potential | | eV | Nonpolar optical deformation potential | | eV·cm−1 | Longitudinal elastic constant | c1 | kg/(m·s2) | Dielectric constant of vacuum | | F·m−1 | Dielectric constant | | — | Long-wave optical phonon energy | | eV | Optical phonon number | nop | — | Material density | | g·cm−3 |
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