Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode

Table 1

Extracted parameters of Si/ZnO heterojunction and comparison with the previous work.

	Rs (Ω)	N	F B (eV)	Io (A)	Nd (cm^−3)	IF/IR
Ref. [30]	—	10	0.696	1 × 10^−6	—	22 @ ± 3V
Ref. [31]	92.5	2.16	0.59	3.66 × 10^−8	—	7350 @ ± 2V
Ref. [26]	—	7.19	0.7	9 × 10^−10	—	—
Ref. [32]	—	3.2	0.74	—	4.02 × 10^15	840 @ ± 5V
Ref. [33]	—	2.38	0.74	1.1 × 10^−7	1.3 × 10^16	40 @ ± 4V
Our work	0.77 K	2.7	0.7	6 × 10 ^−8	1.3 × 10^13	52 @ ± 5V
	Chueng method
	Rs (Ω)	N	ΦB (eV)
	dV/dlnI	H (I)
Ref. [30]	3.2 K	—	7.02	—
Ref. [31]	76	88	4.95	0.63
Ref. [33]	2.69 K	2.706 K	3.69	0.85
Our work	0.75 K	0.73 K	5.7	0.7