Tuning Structural, Electronic, and Magnetic Properties of C Sites Vacancy Defects in Graphene/MoS2 van der Waals Heterostructure Materials: A First-Principles Study

<div>Optimized and relaxed structures of C sites vacancy defects in HS-G/MoS2 materials. (a) R-1C atom vacancy defects in HS-G/MoS2. (b) L-1C atom vacancy defects in HS-G/MoS2. (c) C-1C atom vacancy defects in HS-G/MoS2. (d) 2C atom vacancy defects in HS-G/MoS2.</div>

Advances in Condensed Matter Physics

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Figure 2: Tuning Structural, Electronic, and Magnetic Properties of C Sites Vacancy Defects in Graphene/MoS2 van der Waals Heterostructure Materials: A First-Principles Study

Figure 2 | Tuning Structural, Electronic, and Magnetic Properties of C Sites Vacancy Defects in Graphene/MoS2 van der Waals Heterostructure Materials: A First-Principles Study 