Tuning Structural, Electronic, and Magnetic Properties of C Sites Vacancy Defects in Graphene/MoS<sub>2</sub> van der Waals Heterostructure Materials: A First-Principles Study

<div>(a) Band structure of HS-G/MoS<sub>2,</sub> where horizontal dotted line represents the Fermi level. (b) Spin-up and spin-down electrons are symmetrically distributed in the DOS plot of HS-G/MoS<sub>2</sub>. (c) Spin-up and spin-down electrons are symmetrically distributed in the PDOS plot of HS-G/MoS<sub>2</sub>. In all DOS and PDOS plots, the vertical dotted line represents the Fermi level. States above the horizontal dotted line represent spin-up electrons and states below the horizontal dotted line represents spin-down electrons.</div>

Advances in Condensed Matter Physics

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Figure 3: Tuning Structural, Electronic, and Magnetic Properties of C Sites Vacancy Defects in Graphene/MoS<sub>2</sub> van der Waals Heterostructure Materials: A First-Principles Study 

Figure 3 | Tuning Structural, Electronic, and Magnetic Properties of C Sites Vacancy Defects in Graphene/MoS2 van der Waals Heterostructure Materials: A First-Principles Study 