Theoretical Study of Excitonic Complexes in GaAs/AlGaAs Quantum Dots Grown by Filling of Nanoholes

<div>Electron (<i>E</i><sub><i>n</i></sub>) and hole (<i>HH</i><sub><i>n</i></sub>) confinement energies for the fundamental <i>s</i> (<i>n</i> = 1) and the first excited <i>p</i> (<i>n</i> = 2) states as a function of the QD height <span class="nowrap"><svg height="13.945pt" id="M65" style="vertical-align:-4.65667pt" version="1.1" viewbox="-0.0498162 -9.28833 20.7019 13.945" width="20.7019pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M499 88L487 113C459 86 422 65 413 65C403 65 403 74 409 98L461 318C487 426 460 448 431 448C408 448 383 441 352 424C305 398 223 344 157 257H155L243 674C249 702 249 712 240 712C227 712 170 680 87 673L82 648H117C155 648 162 644 150 590L23 -4L30 -12C55 -4 81 3 105 8C113 53 131 150 143 187C199 281 323 387 372 387C390 387 393 369 380 311L328 86C313 19 319 -12 347 -12C379 -12 442 24 499 88Z"></path></g><g transform="matrix(.0091,0,0,-0.0091,6.643,3.132)"><path d="M720 -138C627 -96 538 -41 476 2C594 39 703 153 703 331C703 532 552 665 384 665C170 665 44 499 44 315C44 215 87 129 147 73C211 11 298 -11 355 -14C476 -99 554 -136 584 -144S664 -160 712 -159L720 -138ZM348 25C231 49 146 172 146 342C146 533 249 629 360 629C497 629 601 510 601 302C601 142 523 51 443 28C434 34 425 41 416 47L348 25Z"></path></g><g transform="matrix(.0091,0,0,-0.0091,13.34,3.132)"><path d="M43 650V622C120 616 128 612 128 526V124C128 39 120 33 34 27V0H270C392 0 492 25 567 83C643 141 690 230 690 350C690 444 655 517 605 565C543 625 450 650 323 650H43ZM213 547C213 587 217 598 226 604C236 612 262 617 304 617C371 617 429 604 474 576C554 529 592 439 592 336C592 176 505 36 319 36C246 36 213 55 213 131V547Z"></path></g></svg>.</span></div>

Advances in Condensed Matter Physics

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Figure 3

Figure 3: Theoretical Study of Excitonic Complexes in GaAs/AlGaAs Quantum Dots Grown by Filling of Nanoholes 