Theoretical Study of Excitonic Complexes in GaAs/AlGaAs Quantum Dots Grown by Filling of Nanoholes

Table 1

Numerical values of the input parameters of the Al_0.36Ga_0.44As barrier layer used in our calculations.

Electron			Heavy hole
0.067	0.093	313.20	0.51	0.60	205.20

m_w and m_b are the effective masses, respectively, in the quantum well material (GaAs) and in the barrier material (AlGaAs) given in free electron mass unit (m_e) and the offset of the conduction (valence) band V_e(h). The energy band gap of GaAs at low temperature is (GaAs) = 1519 meV.