Tuning Electronic Properties of GaSe/Silicane Van der Waals Heterostructure by External Electric Field and Strain: A First-Principle Study

Table 1

The formation energy (E_f) and interface distance (Δ) for the six stacking conformations.

Model	I	II	III	IV	V	VI
Ef/eV	−0.855	−0.838	−0.838	−0.856	−0.857	−0.856
Δ/Å	3.217	3.233	3.218	3.233	3.164	3.189