Research Article
AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer
Figure 3
The C-V characteristics of (a) conventional and (b) recessed ring SBDs. (c) The carrier concentration vs. depths of S1, S2, and S3 by experiment and simulation. (d) The EC energy level vs. depths of S1, S2, and S3. The distribution of polarization charge of (e) S1 and S2, and (f) S3.
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