Research Article
AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer
Table 1
Electrical characteristics of SBDs.
| | Size (μm) | Sample | Ideality factor | Series resistance (Ω) | Saturated Jr at -15V (A) | Capacitance at 0 V | Cutoff frequency (GHz) |
| | R = 100, r = 0 | S1 | 1.64 | 51.5 | 1.0 × 10−6 | 146 pF | 0.021 | | S2 | 1.68 | 39.4 | 8.8 × 10−6 | 163 pF | 0.025 | | S3 | 1.53 | 21.5 | 5.9 × 10−5 | 109 pF | 0.067 |
| | R = 100, r = 99 | S1 | 1.34 | 105.8 | 1.2 × 10−9 | 1.44 pF | 1.04 | | S2 | 1.33 | 52.7 | 2.0 × 10−8 | 1.84 pF | 1.66 | | S3 | 1.95 | 20.5 | 9.9 × 10−8 | 1.25 pF | 6.26 |
| | R = 4, r = 3.95 | S1 | 1.89 | 368 | 1.6 × 10−13 | 10.4 fF | 41.7 | | S2 | 1.94 | 210 | 1.9 × 10−12 | 12.5 fF | 60.6 | | S3 | 2.19 | 151 | 3.4 × 10−10 | 11.5 fF | 91.6 |
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