Research Article
Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well Structures
Figure 3
TE-polarized optical matrix elements for (a) type-I InxGaN/GaN (x = 0.47) and (b) type-II InxGa1−xN/GaN1−ySby/GaN (, ) QW structures as a function of at sheet carrier densities of and .
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