Research Article

Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well Structures

Figure 3

TE-polarized optical matrix elements for (a) type-I InxGaN/GaN (x = 0.47) and (b) type-II InxGa1−xN/GaN1−ySby/GaN (, ) QW structures as a function of at sheet carrier densities of and .
(a)
(b)